Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots

被引：0
|
作者：
O. A. Shegai
A. Yu. Berezovsky
A. I. Nikiforov
V. V. Ul’yanov
机构：
[1] Russian Academy of Sciences,Joint Institute of Semiconductor Physics, Siberian Division
来源：
Physics of the Solid State | 2005年 / 47卷
关键词：
Spectroscopy; Silicon; State Physics; Light Intensity; Germanium;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A nonmonotonic dependence of the lateral photoconductivity (PC) on the interband light intensity is observed in Si/Ge/Si and Si/Ge/SiOx structures with self-organized germanium quantum dots (QDs): in addition to a stepped increase in PC, a stepped decrease in PC is also observed. The effect of temperature and drive field on these features of the PC for both types of structures with a maximum nominal thickness of the Ge layer (NGe) is studied. The results obtained are discussed in the context of percolation theory for nonequilibrium carriers localized in different regions of the structure: electrons in the silicon matrix and holes in QDs.
引用
收藏
页码：30 / 33
页数：3
相关论文
共 50 条
  • [21] Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)
    Boscherini, F
    Capellini, G
    Di Gaspare, L
    Rosei, F
    Motta, N
    Mobilio, S
    APPLIED PHYSICS LETTERS, 2000, 76 (06) : 682 - 684
  • [22] Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity
    Shegai, OA
    Markov, VA
    Nikiforov, AI
    PHYSICS OF THE SOLID STATE, 2004, 46 (01) : 74 - 76
  • [23] Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity
    O. A. Shegai
    V. A. Markov
    A. I. Nikiforov
    Physics of the Solid State, 2004, 46 : 74 - 76
  • [24] Midinfrared photoconductivity in Ge/Si self-assembled quantum dots
    Boucaud, P
    Brunhes, T
    Sauvage, S
    Yam, N
    Le Thanh, V
    Bouchier, D
    Rappaport, N
    Finkman, E
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (01): : 233 - 236
  • [25] Midinfrared photoconductivity of Ge/Si self-assembled quantum dots
    Rappaport, N
    Finkman, E
    Brunhes, T
    Boucaud, P
    Sauvage, S
    Yam, N
    Le Thanh, V
    Bouchier, D
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3224 - 3226
  • [26] Intraband absorption and interband photoconductivity transients in Ge/Si quantum dots
    Kirilenko, O. I.
    Balagula, R. M.
    Sofronov, A. N.
    Firsov, D. A.
    Vorobjev, L. E.
    18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
  • [27] Phonons in Ge/Si superlattices with Ge quantum dots
    Milekhin, AG
    Nikiforov, AI
    Pchelyakov, OP
    Schulze, S
    Zahn, DRT
    JETP LETTERS, 2001, 73 (09) : 461 - 464
  • [28] Phonons in Ge/Si superlattices with Ge quantum dots
    A. G. Milekhin
    A. I. Nikiforov
    O. P. Pchelyakov
    S. Schulze
    D. R. T. Zahn
    Journal of Experimental and Theoretical Physics Letters, 2001, 73 : 461 - 464
  • [29] Photoconductivity of Ge/Si quantum dot photodetectors
    Rappaport, N
    Finkman, E
    Boucaud, P
    Sauvage, S
    Brunhes, T
    Le Thanh, V
    Bouchier, D
    Schacham, SE
    INFRARED PHYSICS & TECHNOLOGY, 2003, 44 (5-6) : 513 - 516
  • [30] Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots
    Talochkin, A. B.
    Cherkov, A. G.
    NANOTECHNOLOGY, 2009, 20 (34)
12345