High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability

被引：0

作者：

Park, Min Sang ^{[1
]}

Lee, Kyong Taek ^{[1
]}

Hong, Seung Ho ^{[1
]}

Song, Seung Hyun ^{[1
]}

Choi, Gil Bok ^{[1
]}

Baek, Rock Hyun ^{[1
]}

Choi, Hyun Sik ^{[1
]}

Sagong, Hyun Chul ^{[1
]}

Jung, Sung Woo ^{[2
]}

Kang, Chang Yong ^{[3
]}

Woo, B. ^{[4
]}

Jeong, Yoon-Ha ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Elect & Elect Engn, Pohang, South Korea

[2] Natl Ctr Nanomat Technol, Pohang, South Korea

[3] SEMATECH, Austin, TX 78741 USA

[4] Poongsan Microtech, Santa Clara, CA USA

来源：

2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年

关键词：

D O I：

10.1109/NMDC.2009.5167527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present high pressure hydrogen annel (HPHA) effects in two types contact etch stop layer (CESL) nitride MOSFETs. Performances increased in both samples of using rapid thermal chemical vapor deposition (RTCVD) and plasma enhanced chemical vapor deposition (PECVD) nitride stress layers, but reliability only degraded in PECVD samples after HPHA.

引用

页码：229 / +

页数：3

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