Negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors

被引：101
|
作者：
Chen, Chih-Yang [1 ]
Lee, Jain-Wem [1 ]
Wang, Shen-De [1 ]
Shieh, Ming-Shan [1 ]
Lee, Po-Hao [1 ]
Chen, Wei-g Chen [1 ]
Lin, Hsiao-Yi [1 ]
Yeh, Kuan-Lin [1 ]
Lei, Tan-Fu [1 ]
机构：
[1] Natl Nanodevice Lab, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 12期
关键词：
grain-boundary trap state; low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs); negative bias temperature instability (NBTI); reliability;
D O I：
10.1109/TED.2006.885543
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have proved that negative bias temperature instability (NBTI) is an important reliability issue in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The measurements revealed that the threshold-voltage shift is highly correlated to the generation of grain-boundary trap states. Both these two physical quantities follow almost the same power law dependence on the stress time; that is, the same exponential dependence on the stress voltage and the reciprocal of the ambient temperature. In addition, the threshold-voltage shift is closely associated with the subthreshold-swing degradation, which originates from dangling bond formation. By expanding the model proposed for bulk-Si MOSFETs, a new model to explain the NBTI-degradation mechanism for UPS TFTs is introduced.
引用
收藏
页码：2993 / 3000
页数：8
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