Illumination-Assisted Negative Bias Temperature Instability Degradation in Low Temperature Polycrystalline Silicon Thin-Film Transistors

被引：1

作者：

Lin, Chia-Sheng ^{[1
]}

Chen, Ying-Chung ^{[1
]}

Chang, Ting-Chang ^{[2
,3
,4
]}

Hsu, Wei-Che ^{[2
]}

Chen, Shih-Ching ^{[2
]}

Li, Hung-Wei ^{[5
,6
]}

Tu, Kuan-Jen ^{[2
]}

Jian, Fu-Yen ^{[3
]}

Chen, Te-Chih ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[5] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[6] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 06期

关键词：

elemental semiconductors; grain boundaries; insulated gate field effect transistors; interface states; semiconductor device reliability; silicon; thin film transistors;

D O I：

10.1149/1.3115400

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work, the negative bias temperature instability (NBTI) in low temperature polycrystalline silicon thin-film transistors in a darkened and in an illuminated environment was investigated. Experimental results reveal that the generation of interface state density (N-it) showed no change between the different NBTI stresses. Nevertheless, the degradation of the grain boundary trap (N-trap) under illumination was more significant than that in the darkened environment. This phenomenon is mainly caused by the extra number of holes generated during the illuminated NBTI stress.

引用

页码：H229 / H232

页数：4

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