An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors

被引：0
|
作者：
Lin, Ching-Wei [1 ,2 ]
Tseng, Chang-Ho [1 ]
Chang, Ting-Kuo [1 ]
Chang, Yuan-Hsun [1 ]
Chu, Fang-Tsun [1 ]
Lin, Chiung-Wei [1 ]
Wang, Wen-Tung [1 ]
Cheng, Huang-Chung [1 ]
机构：
[1] Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
[2] Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 09期
关键词：
Bond breakage;
D O I：
10.1143/jjap.41.5517
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5517 / 5522
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