High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

被引：85

作者：

Kumar, V ^{[1
]}

Kuliev, A

Tanaka, T

Otoki, Y

Adesida, I

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 24期

关键词：

D O I：

10.1049/el:20031124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 mum gate-length enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 1 mum gate-length devices exhibited maximum drain current density of 470 mA/mm, extrinsic transconductance of 248 mS/mm and threshold voltage of 75 mV These characteristics are much higher than previously reported values for GaN-based E-mode HEMTs. A unity gain cutoff frequency (f(T)) of 8 GHz and a maximum frequency of oscillation (f(max)) of 26 GHz were also measured on these devices.

引用

页码：1758 / 1760

页数：3

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