Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

被引：64

作者：

Sengupta, Shamashis ^{[1
]}

Wang, Kevin ^{[2
]}

Liu, Kai ^{[2
]}

Bhat, Ajay K. ^{[1
]}

Dhara, Sajal ^{[1
]}

Wu, Junqiao ^{[2
]}

Deshmukh, Mandar M. ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 06期

关键词：

METAL-INSULATOR DOMAINS; MOTT TRANSITION; SURFACE-STATES; ORGANIZATION;

D O I：

10.1063/1.3624896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (similar to 6%) of our devices induced by gate voltage when the system is in the insulating phase. The response is reversible and hysteretic, and the area of hysteresis loop becomes larger as the rate of gate sweep is slowed down. A phase lag exists between the response of the conductance and the gate voltage. This indicates the existence of a memory of the system and we discuss its possible origins. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624896]

引用

页数：3

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