Charge transfer modeling for charge-coupled devices

被引：0

作者：

Lavine, JP ^{[1
]}

Stevens, EG ^{[1
]}

Banghart, EK ^{[1
]}

Trabka, EA ^{[1
]}

Burkey, BC ^{[1
]}

Schneider, DJ ^{[1
]}

机构：

[1] Eastman Kodak Co, Microelect Technol Div, Rochester, NY 14650 USA

来源：

SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING | 1998年 / 490卷

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The three-dimensional Poisson's equation is solved by iterative methods and the resulting electric field is used in Newton's equation to simulate electron transfer in a charge-coupled device (CCD). The time dependence of charge transfer is studied through a random walk simulation of Newton's equation. Potential obstacles of the order of 0.03 V are seen to slow charge transfer. Electron motion is also followed in two spatial dimensions through Newton's equation in order to probe a more varied set of potential obstacles.

引用

页码：251 / 256

页数：6

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