Dual-sided charge-coupled devices

被引:0
|
作者
Tiffenberg, Javier [1 ]
Egana-Ugrinovic, Daniel [2 ]
Haro, Miguel Sofo [1 ,3 ]
Du, Peizhi [4 ]
Essig, Rouven [5 ]
Fernandez-Moroni, Guillermo [1 ]
Uemura, Sho [1 ]
机构
[1] Fermilab Natl Accelerator Lab, POB 500, Batavia, IL 60510 USA
[2] Perimeter Inst Theoret Phys, Waterloo, ON N2L 2Y5, Canada
[3] Ctr Atom Bariloche, CNEA, CONICET, IB, San Carlos De Bariloche, Argentina
[4] Rutgers State Univ, New High Energy Theory Ctr, Piscataway, NJ 08854 USA
[5] SUNY Stong Brook, CN Yang Inst Theoret Phys, Stony Brook, NY 11794 USA
来源
PHYSICAL REVIEW APPLIED | 2024年 / 22卷 / 01期
关键词
DARK CURRENT; FABRICATION; SILICON; DAMAGE;
D O I
10.1103/PhysRevApplied.22.014008
中图分类号
O59 [应用物理学];
学科分类号
摘要
Existing charge-coupled devices (CCDs) operate by detecting either the electrons or holes created in an ionization event. We propose an imager, the dual-sided CCD, which collects and measures both charge carriers on opposite sides of the device via a dual-buried channel architecture. We show that this dual detection strategy provides exceptional dark-count rejection and enhanced timing capabilities. These advancements have wide-ranging implications for dark-matter searches, near-infrared/optical spectroscopy, and time-domain x-ray astrophysics.
引用
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页数:13
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