CHARGE-COUPLED DEVICES.

被引:0
|
作者
Mavor, John
机构
来源
Engineering (London) | 1978年 / 218卷 / 01期
关键词
D O I
暂无
中图分类号
TN7 [基本电子电路];
学科分类号
080902 ;
摘要
Charge-coupled devices (c. c. d. )22 offer the possibility of performing electronic functions simply and inexpensively for a vast range of electronic hardware applications. They can be designed specifically for optical imaging, mass memory for storing digital signals and also analog signal processing; alternatively, combining two or three of these functions on a single integrated circuit is likely to create novel electronic systems solutions which, hitherto, could not be realized sensibly with alternative components. This article examines basic c. c. d. operating features and discusses their technology and its limitations. The design concepts central to the three main emerging application areas are discussed, and likely developments are reviewed with reference to specific c. c. d. designs. 11 refs.
引用
收藏
相关论文
共 50 条
  • [1] CHARGE PARTITION NOISE IN CHARGE-COUPLED DEVICES.
    Colquitt Jr., Leroy
    Bluzer, Nathan
    McKee, Richard
    [J]. 1600, (26):
  • [2] IMAGE SENSING IN REAL TIME WITH CHARGE-COUPLED DEVICES.
    Cotton, Doug
    [J]. Telesis Ottawa, 1982, 9 (04): : 26 - 30
  • [3] SIGNAL-PROCESSING APPLICATIONS OF CHARGE-COUPLED DEVICES.
    Dutta Roy, S.C.
    Bhattacharyya, A.B.
    Vasi, J.M.
    Das, V.G.
    Shankar, L.
    Kapur, Navin
    [J]. 1978, 24 (10-11): : 400 - 418
  • [4] CHARGE-COUPLED DEVICES. A NEW APPROACH TO MIS DEVICE STRUCTURES
    Bell Telephone Laboratories, Inc., United States
    [J]. IEEE Spectrum, 1600, 7 (18-27):
  • [5] FEATURES OF THE ELECTRICAL ACTIVITY OF INTERSTITIAL STACKING FAULTS IN CHARGE-COUPLED DEVICES.
    Kryuchkov, S.M.
    Lavrenov, A.A.
    Khainovskii, V.I.
    [J]. Soviet Microelectronics (English Translation of Mikroelektronika), 1980, 9 (02): : 94 - 98
  • [6] LOW-TEMPERATURE CHARACTERISTICS OF BURIED CHANNEL CHARGE-COUPLED DEVICES.
    Kimata, Masafumi
    Denda, Masahiko
    Yutani, Naoki
    Iwade, Syuhei
    Tsubouchi, Natsuro
    [J]. Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1986, 69 (08): : 30 - 39
  • [7] CHARGE-COUPLED DEVICES
    SCHMIDT, J
    [J]. ELECTRONICS, 1971, 44 (08): : 8 - &
  • [8] FRINGING FIELDS AND INTERFACE STATES EFFECTS OF INCOMPLETE CHARGE TRANSFER IN CHARGE-COUPLED DEVICES.
    Barsan, R.M.
    [J]. 1600, (21):
  • [9] AUTOMATED SYSTEMS FOR RECORDING OF PULSED LIGHT IMAGES USING CHARGE-COUPLED DEVICES.
    Korzh, V.I.
    Subbotin, V.T.
    Chernikov, V.I.
    Yushchenko, V.M.
    [J]. Instruments and experimental techniques New York, 1987, 30 (2 pt 2): : 373 - 376
  • [10] LOW-TEMPERATURE CHARACTERISTICS OF BURIED-CHANNEL CHARGE-COUPLED DEVICES.
    Kimata, Masafumi
    Denda, Masahiko
    Yutani, Naoki
    Tsubouchi, Natsuro
    Uematsu, Shigeyuki
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (06): : 975 - 980