Dual-sided charge-coupled devices

被引：0

作者：

Tiffenberg, Javier ^{[1
]}

Egana-Ugrinovic, Daniel ^{[2
]}

Haro, Miguel Sofo ^{[1
,3
]}

Du, Peizhi ^{[4
]}

Essig, Rouven ^{[5
]}

Fernandez-Moroni, Guillermo ^{[1
]}

Uemura, Sho ^{[1
]}

机构：

[1] Fermilab Natl Accelerator Lab, POB 500, Batavia, IL 60510 USA

[2] Perimeter Inst Theoret Phys, Waterloo, ON N2L 2Y5, Canada

[3] Ctr Atom Bariloche, CNEA, CONICET, IB, San Carlos De Bariloche, Argentina

[4] Rutgers State Univ, New High Energy Theory Ctr, Piscataway, NJ 08854 USA

[5] SUNY Stong Brook, CN Yang Inst Theoret Phys, Stony Brook, NY 11794 USA

来源：

PHYSICAL REVIEW APPLIED | 2024年 / 22卷 / 01期

关键词：

DARK CURRENT; FABRICATION; SILICON; DAMAGE;

D O I：

10.1103/PhysRevApplied.22.014008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Existing charge-coupled devices (CCDs) operate by detecting either the electrons or holes created in an ionization event. We propose an imager, the dual-sided CCD, which collects and measures both charge carriers on opposite sides of the device via a dual-buried channel architecture. We show that this dual detection strategy provides exceptional dark-count rejection and enhanced timing capabilities. These advancements have wide-ranging implications for dark-matter searches, near-infrared/optical spectroscopy, and time-domain x-ray astrophysics.

引用

页数：13

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