Effect of Radiation on Reliability of Through-Silicon via for 3-D Packaging Systems

被引：7
|
作者：
Zeng, Qinghua [1 ]
Chen, Jing [1 ]
Jin, Yufeng [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2017年 / 17卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Through-silicon via; radiation; leakage current; capacitance; MODERN CMOS TECHNOLOGIES; MOS OXIDES; CAPACITANCE;
D O I：
10.1109/TDMR.2017.2749640
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, radiation reliability of through-silicon via (TSV) was studied experimentally. Characterization of leakage current between adjacent TSVs and capacitance of an array of TSVs was used to evaluate the effects of radiation on reliability of TSVs. All samples were exposed to Co-60 gamma radiation with a total radiation dose of 500 Gy. It was observed that leakage current increased and coupling capacitance decreased. The increase of leakage current was explained based on the percolation model for thin oxide layers. The decrease of capacitance was analyzed with the theory of coupling capacitance and equation of flat-band voltage and charge in the oxide layer. It is important and necessary to consider the effect of radiation on reliability of TSV for TSV-based applications under radiation conditions.
引用
收藏
页码：708 / 712
页数：5
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