Application of a CMP model to tungsten CMP

被引：47
|
作者：
Paul, E [1 ]
机构：
[1] Stockton State Coll, Pomona, NJ 08240 USA
[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 06期
关键词：
D O I：
10.1149/1.1372223
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail. (C) 2001 The Electrochemical Society.
引用
收藏
页码：G359 / G363
页数：5
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