Tungsten CMP: Reduction behavior of iodate ion on tungsten

被引：0

作者：

Anik, M ^{[1
]}

Osseo-Asare, K ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS | 2000年 / 99卷 / 37期

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Potentiodynamic polarization was used to study the reduction behavior of iodate ion (IO3-) on tungsten (W) Oxide film formation on W was found to be accelerated considerably in the presence of IO3-. The rate of reduction of IO3- was observed to be controlled by the transfer of H+ to the electrode surface. Tungsten dissolution rate under CMP conditions was predicted with the aid of mixed potential theory. At pH 4 the polishing rate was predicted to increase as the IO3- concentration increased. In contrast, at pH 2, the polishing rate was predicted to be independent of IO3- concentration.

引用

页码：354 / 360

页数：5

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