Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

被引：131
|
作者：
Cheng, Chun-Hu [2 ,3 ]
Yeh, Fon-Shan [2 ,3 ]
Chin, Albert [1 ]
机构：
[1] Natl Chiao Tung Univ, Depatment Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect Engn, Hsinchu 30010, Taiwan
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 07期
关键词：
RESISTIVE SWITCHING MEMORIES; CAPACITORS; FILMS;
D O I：
10.1002/adma.201002946
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.
引用
收藏
页码：902 / +
页数：5
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