Very High Performance Non-Volatile Memory on Flexible Plastic Substrate

被引：0
|
作者：
Cheng, C. H. [1 ]
Chou, K. Y. [2 ]
Chin, Albert [2 ]
Yeh, F. S. [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年
关键词：
TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 mu W switching power (1.6 mu A at 3 V; -0.5 nA at -2 V), excellent 10(5) cycling endurance, large on/off retention memory window > 10(2) even at 85 degrees C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.
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页数：4
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