APPLICATION OF ACOUSTIC METROLOGY FOR IN-LINE MICROBUMP PROCESS MONITORING IN ADVANCED PACKAGING

被引：0

作者：

Mehendale, M. ^{[1
]}

Alves, M. ^{[1
]}

Mair, R. ^{[1
]}

Dai, J. ^{[1
]}

Mukundhan, P. ^{[1
]}

Hollman, R. ^{[2
]}

Best, K. ^{[3
]}

Kotelyanskii, M. ^{[3
]}

机构：

[1] Rudolph Technol, 550 Clark Dr, Budd Lake, NJ 07828 USA

[2] ASM Nexx, 900 Middlesex Turnpike,Bldg 6, Billerica, MA 01821 USA

[3] Rudolph Technol Headquarters, 16 Jonspin Rd, Wilmington, MA 01887 USA

来源：

2019 INTERNATIONAL WAFER LEVEL PACKAGING CONFERENCE (IWLPC) | 2019年

关键词：

Microbumps; in-line metrology; fine pitch; 3D stacking;

D O I：

10.23919/iwlpc.2019.8914097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solder-based fine pitch microbumps along with through silicon vias (TSV) enable high density interconnects for die-to-die and die-to-wafer stacking for different applications. With reduction in bump dimensions, several challenges arise that need to be addressed. For example, selection of under bump metallization (UBM), solder and barrier between them can determine the consumption of the UBM by solder and transformation to intermetallic compound (IMC), during thermocompression bonding. In this study, we systematically investigate the effectiveness of PULSE (TM) metrology on microbumps with a range of diameters and a variety of metal stacks. On wafers with a Ti/Cu seed layer, a test pattern of microbump features with diameters down to 20 m was imaged in 50 m photoresist and plated with a matrix of bi-layer (Cu/Ni), tri-layer (Cu/Ni/SnAg) and multi-layer Cu/Ni/Cu/SnAg stacks to form the microbumps. We present results from the study to demonstrate the capability of the technique for in-line measurements of individual layer thickness.

引用

页数：6

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