Investigation of interlayer phenomena in Ti/Pt electrodes for ferroelectric thin film devices

被引:0
|
作者
Frey, J
Schönecker, A
Schlenkrich, F
Thomas, J
Hermel, W
机构
[1] Fraunhofer Inst Keram Technol & Sinterwerkstoffe, D-01277 Dresden, Germany
[2] Inst Festkorper & Werkstoffforsch, Dresden, Germany
来源
ZEITSCHRIFT FUR METALLKUNDE | 2001年 / 92卷 / 02期
关键词
PTZ thin films; Pt electrodes; diffusion of Ti in PTZ;
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
The paper deals with the interrelations between preparation and microstructure of a Si/SiO2/Ti/Pt/TiO2/Pb(Zr,Ti)O-3 multilayer configuration. A wet chemical approach was used for Pb(Zr,Ti)O-3 (PZT) deposition on sputtered Ti/Pt thin films. The chosen sol-gel process allows heterogeneous nucleation of PZT on the underlying Pt electrode at a temperature of 400 degreesC without interference of Ti diffusion from the Ti interlayer. In this case the texture of the PZT film can be switched from (100) to (111) by the thin TiO2 interlayer on top of the Pt (111). This knowledge is essential for the fabrication of ferroelectric thin film devices with tailored properties.
引用
收藏
页码:141 / 144
页数:4
相关论文
共 50 条
  • [31] Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices
    Garda, Bartlomiej
    Kasinski, Krzysztof
    Ogorzalek, Maciej
    Galias, Zbigniew
    2017 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN (ECCTD), 2017,
  • [32] Dielectric breakdown in (Pb,La)(Zr,Ti)O3 ferroelectric thin films with Pt and oxide electrodes
    Stolichnov, I
    Tagantsev, A
    Setter, N
    Okhonin, S
    Fazan, P
    Cross, JS
    Tsukada, M
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1925 - 1931
  • [33] Preparation of conductive LaNiO3 film electrodes by a simple chemical solution deposition technique for integrated ferroelectric thin film devices
    Bao, DH
    Yao, X
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (10) : 1217 - 1221
  • [34] Oxide ferroelectric thin film/nematic liquid crystal devices
    Whatmore, W
    Shaw, CP
    Zhang, Q
    Roy, SS
    Gleeson, HF
    INTEGRATED FERROELECTRICS, 2001, 41 (1-4) : 1655 - 1668
  • [35] Microwave Tunable devices Based on Patterned Ferroelectric Thin Film
    Ong, C. K.
    Wang, P.
    2008 17TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, 2008, : 257 - 260
  • [36] Nanostructure and performance of Pt-LaNiO3 composite film for ferroelectric film devices
    Qiao, Liang
    Bi, Xiaofang
    ACTA MATERIALIA, 2009, 57 (14) : 4109 - 4114
  • [37] Fabrication and characterization of thin Ti film for nano devices
    Kuang, DF
    Liu, QG
    Mi, WB
    Bai, HL
    Hu, XT
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, 2004, : 464 - 467
  • [38] Preparation of Pt thin film electrodes using the Pechini method
    Freitas, RG
    Oliveira, RTS
    Santos, MC
    Bulhoes, LOS
    Pereira, EC
    MATERIALS LETTERS, 2006, 60 (15) : 1906 - 1910
  • [39] Microfabrication and reliability study of sapphire based Ti/Pt electrodes for thin-film gas sensor applications
    Qu, WM
    Wlodarski, W
    Austin, M
    DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS, 1999, 3892 : 212 - 220
  • [40] Electrical properties of Pb(Zr, Ti)O3 thin film capacitors on Pt and Ir electrodes
    Nakamura, Takashi
    Nakao, Yuichi
    Kamisawa, Akira
    Takasu, Hidemi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (9 B): : 5184 - 5187