Investigation of interlayer phenomena in Ti/Pt electrodes for ferroelectric thin film devices

被引：0
|
作者：
Frey, J
Schönecker, A
Schlenkrich, F
Thomas, J
Hermel, W
机构：
[1] Fraunhofer Inst Keram Technol & Sinterwerkstoffe, D-01277 Dresden, Germany
[2] Inst Festkorper & Werkstoffforsch, Dresden, Germany
来源：
ZEITSCHRIFT FUR METALLKUNDE | 2001年 / 92卷 / 02期
关键词：
PTZ thin films; Pt electrodes; diffusion of Ti in PTZ;
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The paper deals with the interrelations between preparation and microstructure of a Si/SiO2/Ti/Pt/TiO2/Pb(Zr,Ti)O-3 multilayer configuration. A wet chemical approach was used for Pb(Zr,Ti)O-3 (PZT) deposition on sputtered Ti/Pt thin films. The chosen sol-gel process allows heterogeneous nucleation of PZT on the underlying Pt electrode at a temperature of 400 degreesC without interference of Ti diffusion from the Ti interlayer. In this case the texture of the PZT film can be switched from (100) to (111) by the thin TiO2 interlayer on top of the Pt (111). This knowledge is essential for the fabrication of ferroelectric thin film devices with tailored properties.
引用
收藏
页码：141 / 144
页数：4
相关论文
共 50 条
  • [1] Investigation of interlayer phenomena in Ti/Pt electrodes for ferroelectric thin film devices
    Frey, J.
    Schönecker, A.
    Schlenkrich, F.
    Thomas, J.
    Hermel, W.
    Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, 2001, 92 (02): : 141 - 144
  • [2] Barium metaplumbate thin film electrodes for ferroelectric devices
    Mardare, AI
    Mardare, CC
    Joanni, E
    Fernandes, JRA
    Vilarinho, PM
    Kholkin, AL
    FERROELECTRICS, 2003, 293 : 177 - 188
  • [3] INVESTIGATION OF PT/TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION
    SREENIVAS, K
    REANEY, I
    MAEDER, T
    SETTER, N
    JAGADISH, C
    ELLIMAN, RG
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 232 - 239
  • [4] Investigation of PtNb alloy electrodes for ferroelectric Pb(Zr, Ti)O 3 thin film capacitors
    Kurita, Masaaki
    Okamura, Soichiro
    Shiosaki, Tadashi
    1600, Japan Society of Applied Physics (43):
  • [5] Investigation of PtNb alloy electrodes for ferroelectric Pb(Zr,Ti)O3 thin film capacitors
    Kurita, M
    Okamura, S
    Shiosaki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (7A): : 4124 - 4128
  • [6] Effect of annealing temperatures on phases and microstructures of Pt and Pt/Ti bottom electrodes for ferroelectric thin films
    Cailiao Yanjiu Xuebao, 4 (363-368):
  • [7] Structural investigations of Pt/TiOx electrode stacks for ferroelectric thin film devices
    Cao, JL
    Solbach, A
    Klemradt, U
    Weirich, T
    Mayer, J
    Horn-Solle, H
    Böttger, U
    Schorn, PJ
    Schneller, T
    Waser, R
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
  • [8] Ferroelectric Thin-Film Devices
    Scott, J. F.
    Morrison, F. D.
    FERROELECTRICS, 2008, 371 : 3 - 9
  • [9] Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers
    Millon, C
    Malhaire, C
    Dubois, C
    Barbier, D
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (2-3) : 243 - 247
  • [10] Properties of thin ferroelectric film with different electrodes
    Glinchuk, M. D.
    Zaulychny, B. Y.
    Stephanovich, V. A.
    FERROELECTRICS, 2008, 363 : 251 - 261
12345