Impact of metal dummy fills on the performance of CMOS inductors

被引：0
|
作者：
Nan, Lan [1 ]
Mouthaan, Koen [1 ]
Xiong, Yong-Zhong [2 ]
Shi, Jinglin [2 ]
Rustagi, Subhash Chander [2 ]
Ooi, Ban-Leong [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect Engn, Singapore 117576, Singapore
[2] Inst Microelect, Singapore, Singapore
来源：
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To meet the metal density and uniformity requirement, metal dummy fills are inserted on all metallization layers in modern CMOS technologies. These metal dummy rills can have a detrimental effect on the performance of IC components. In this paper, the impact of metal dummy fills on the equivalent circuit and the performance of on-chip spiral inductors is presented based on experimental data. A simple closed-form formula is further provided to account for the effect of metal dummy rills to update the model for inductors in the conventional environment without metal dummy fills.
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页码：251 / +
页数：2
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