Calculation of the vertical and horizontal electron mobilities in InAs/GaSb superlattices

Efficient perpendicular transport of carriers by drift and diffusion in InAs/GaSb superlattice-based devices is necessary for achieving high device figures of merit. However, the values of perpendicular mobilities are usually inferred indirectly or through nonstandard experiments. Treating perpendicular and transverse mobilities on equal footing, we present here the results of a calculation of low-temperature perpendicular and transverse electron mobilities in InAs/GaSb superlattices as limited by interface-roughness scattering. Using the calculated mobility curves, it is possible to infer the value of the vertical mobility from measurements of the horizontal mobility. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584865]