Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response

被引:4
|
作者
Shafi, Abde Mayeen [1 ]
Das, Susobhan [1 ]
Khayrudinov, Vladislav [1 ]
Uddin, Md Gius [1 ]
Ding, Er-Xiong [1 ]
Ahmed, Faisal [1 ]
Sun, Zhipei [1 ,2 ]
Lipsanen, Harri [1 ]
机构
[1] Aalto Univ, Dept Elect & Nanoengn, FI-02150 Espoo, Finland
[2] Aalto Univ, QTF Ctr Excellence, Dept Appl Phys, FI-00076 Espoo, Finland
基金
芬兰科学院;
关键词
TRANSITION-METAL DICHALCOGENIDES; DER-WAALS EPITAXY; 2-DIMENSIONAL MATERIALS; GAAS NANOWIRES; SOLAR-CELLS; EFFICIENCY; INTEGRATION; EVOLUTION;
D O I
10.1021/acs.chemmater.2c01602
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Mixed-dimensional van der Waals heterostructures are promising for research and technological advances in photonics and optoelectronics. Here we report vapor-liquid-solid (VLS) method -based van der Waals epitaxy of one-dimensional InP nanowires (NWs) directly on two-dimensional MoS2. With optimized growth parameters (V/III ratio, flow rates of precursors, and growth temperature), we successfully grow high-quality InP NWs on MoS2. The density and vertical yield of NWs on MoS2 are significantly high. Due to the unique properties of both materials, we observe strong linear and nonlinear optical responses from the NW/MoS2 heterostructures. Intriguingly, in addition to strong second and third harmonic responses, the mixed-dimensional heterostructures show odd-order high harmonic generation up to seventh order. Our findings can open new possibilities for advancing attosecond physics on a new platform of mixed-dimensional heterostructures.
引用
收藏
页码:9055 / 9061
页数:7
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