Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection

被引:4
|
作者
Song, Mengting [1 ]
An, Nan [1 ]
Zou, Yuke [1 ]
Zhang, Yue [1 ]
Huang, Wenjuan [1 ,2 ]
Hou, Huayi [1 ]
Chen, Xiangbai [1 ]
机构
[1] Wuhan Inst Technol, Hubei Key Lab Opt Informat & Pattern Recognit, Wuhan 430205, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; gallium selenide; second harmonic generation; chemical vapor deposition; photodetector; GASE THIN-FILMS; BLACK PHOSPHORUS; PHOTORESPONSE; GENERATION; PROPERTY; LAYERS;
D O I
10.1007/s11467-023-1277-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
As an emerging group III-VI semiconductor two-dimensional (2D) material, gallium selenide (GaSe) has attracted much attention due to its excellent optical and electrical properties. In this work, high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition (CVD) method. Due to the non-centrosymmetric structure, the grown GaSe nanoflakes exhibits excellent second harmonic generation (SHG). In addition, the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation, with a rise time of 6 ms and decay time of 10 ms. These achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and (opto)-electronics.
引用
收藏
页数:8
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