Donor impurity states in wurtzite InGaN staggered quantum wells

被引：8

作者：

Xia, Congxin ^{[1
,2
,3
]}

Jia, Yalei ^{[1
]}

Wei, Shuyi ^{[1
]}

Jia, Yu ^{[2
,3
]}

Spector, Harold N. ^{[4
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

[2] Zhengzhou Univ, Ctr Clean Energy & Quantun Struct, Zhengzhou 450052, Peoples R China

[3] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China

[4] IIT, Dept Phys, Chicago, IL 60616 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 20期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; SEMICONDUCTORS; POLARIZATION; EMISSION; LASERS;

D O I：

10.1063/1.3662848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Within the framework of the effective-mass approximation, donor impurity states in wurtzite (WZ) InGaN staggered quantum wells (QWs) are investigated theoretically. Numerical results show that the donor binding energy becomes insensitive to the variation of In composition y in the WZ In(0.2)Ga(0.8)N/ InyGa(1-y)N staggered QWs when y > 0.125 and for any impurity position. Moreover, for the impurity located at the right edge of the InyGa(1-y)N well layer, the donor binding energy has a minimum and it is also insensible to the variation of well width in the staggered QWs when the well width L > 3 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662848]

引用

页数：3

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