Optical properties in wurtzite InGaN staggered quantum wells

被引:0
|
作者
Geng, Zhenduo [1 ]
Wang, Yuping [2 ]
机构
[1] Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Henan, Peoples R China
[2] Xinxiang Univ, Coll Phys & Elect Engn, Xinxiang 453007, Henan, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2015年 / 29卷 / 15期
基金
美国国家科学基金会;
关键词
InGaN; quantum wells; polarization field; optical properties; LIGHT-EMITTING-DIODES; EFFICIENCY;
D O I
10.1142/S0217984915500761
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization field effects on exciton states and optical properties are studied theoretically in the wurtzite (WZ) InxGa(1-x)N/InyGa(1-y)N staggered quantum wells (QWs). Numerical results show that the polarization field effects are obvious on the Stark shifts of the exciton binding energy, the oscillator strength and the emission wavelength when the well width and Indium content y increase in the symmetric staggered QWs. However, the influences of InxGa1-xN well layer are remarkable on exciton states and optical properties when the Indium concentration y is small in the asymmetric staggered QWs. In addition, the ground state linear optical susceptibility is also investigated in the WZ staggered QWs.
引用
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页数:12
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