Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applications

被引：4
|
作者：
Xia, Congxin [1 ,2 ]
Zhang, Heng [1 ]
Jia, Yalei [1 ]
Wei, Shuyi [1 ]
Jia, Yu [2 ]
机构：
[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Henan, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Engn, Ctr Clean Energy & Quantum Struct, Zhengzhou 450001, Henan, Peoples R China
来源：
SCRIPTA MATERIALIA | 2013年 / 68卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
InGaN; Quantum well; Exciton; Built-in electric field; Optical properties; PHASE-SEPARATION; STATES;
D O I：
10.1016/j.scriptamat.2012.10.020
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Based on the effective-mass approximation, our calculation shows that for the wurtzite (WZ) In0.2Ga0.8N/InyGa1-yN symmetric staggered quantum well (QW) with In content y > 0.1, the stepped barrier effects are insensible to exciton states. However, for the WZ In0.2Ga0.8N/InyGa1-yN asymmetric staggered QWs, the maximum values of the exciton recombination rate appear when the In0.2Ga0.8N well layer is smaller than the InyGa1-yN layer thickness for In concentrations y < 0.1. The studies are useful in the design of high-performance blue and green light-emitting diodes. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：203 / 206
页数：4
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