Synthesis of Nd-doped Si thin films by laser ablation

被引：0
|
作者：
Kawai, Shinji [1 ]
Komuro, Shuji [2 ]
Katsumata, Toru [2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Sensor Photon Ctr, Saitama 3508585, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 | 2010年 / 7卷 / 3-4期
关键词：
ROOM-TEMPERATURE LUMINESCENCE; MU-M; PHOTOLUMINESCENCE; SILICON; EXCITATION; CENTERS;
D O I：
10.1002/pssc.200982666
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Neodymium-doped Si thin films (Si:Nd) have been controllably synthesized over the Nd concentration ranging from 10(19) to 10(21) cm(-3) by laser ablation, which is a useful and simple technique to control the Nd doping level into a host material. Intense and sharp Nd3+-related photoluminescence (PL) is observed from 10 K up to room temperature. From the PL spectra and their temperature and Nd concentration dependence, it is found that Nd3+ emissions result from the indirect excitation of Nd3+ through the energy transfer of electron-hole pairs created in the SiOx host, which is formed into the Si matrix. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：579 / 582
页数：4
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