Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures

被引：10
|
作者：
Vengalis, Bonifacas [1 ]
Devenson, Jelena [1 ]
Oginskis, Antanas K. [1 ]
Lisauskas, Vaclovas [1 ]
Anisimovas, Fiodoras [1 ]
Butkute, Renata [1 ]
Dapkus, Leonas [1 ]
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12 | 2009年 / 6卷 / 12期
关键词：
D O I：
10.1002/pssc.200982540
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150-350 nm) were grown at 650-750 degrees C by RF sputtering on dielectric (SrTiO3; ZrO2 < Y >) and conducting (Nb-doped SrTiO3(100); n-type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T=295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T=300 K although complicated shape of I-U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：2746 / 2749
页数：4
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