The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films

被引：1

作者：

Gao Chen ^{[1
]}

Yang Jing ^{[2
]}

Meng Xiang-Jian ^{[1
]}

Bai Wei ^{[2
]}

Lin Tie ^{[1
]}

Sun Jing-Lan ^{[1
]}

Chu Jun-Hao ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2012年 / 31卷 / 01期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

ferroelectric thin films; dielectric property; Nd doping; leakage current;

D O I：

10.3724/SP.J.1010.2012.00021

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The Nd doped BiFeO3 thin films are prepared on LaNiO3/Si (100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3 thin films.

引用

页码：21 / 25

页数：5

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