Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures

被引：10

作者：

Vengalis, Bonifacas ^{[1
]}

Devenson, Jelena ^{[1
]}

Oginskis, Antanas K. ^{[1
]}

Lisauskas, Vaclovas ^{[1
]}

Anisimovas, Fiodoras ^{[1
]}

Butkute, Renata ^{[1
]}

Dapkus, Leonas ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12 | 2009年 / 6卷 / 12期

关键词：

D O I：

10.1002/pssc.200982540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150-350 nm) were grown at 650-750 degrees C by RF sputtering on dielectric (SrTiO3; ZrO2 < Y >) and conducting (Nb-doped SrTiO3(100); n-type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T=295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T=300 K although complicated shape of I-U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2746 / 2749

页数：4

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