InGaN photocatalysts on conductive Ga2O3 substrates

被引：4
|
作者：
Ogita, Taro [1 ]
Uetake, Yusuke [1 ]
Yamashita, Yoshihiro [2 ]
Kuramata, Akito [2 ]
Yamakoshi, Shigenobu [2 ]
Ohkawa, Kazuhiro [1 ]
机构：
[1] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1258585, Japan
[2] Tamura Corp, Sayama, Saitama 3501328, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 05期
关键词：
Ga2O3; hydrogen; InGaN; photocatalysis; substrates; AQUEOUS WATER; HYDROGEN GAS; DECOMPOSITION; GENERATION; OXIDATION; GROWTH; VAPOR; H-2;
D O I：
10.1002/pssa.201431731
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H-2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts.
引用
收藏
页码：1029 / 1032
页数：4
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