InGaN photocatalysts on conductive Ga2O3 substrates

被引：4
|
作者：
Ogita, Taro [1 ]
Uetake, Yusuke [1 ]
Yamashita, Yoshihiro [2 ]
Kuramata, Akito [2 ]
Yamakoshi, Shigenobu [2 ]
Ohkawa, Kazuhiro [1 ]
机构：
[1] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1258585, Japan
[2] Tamura Corp, Sayama, Saitama 3501328, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 05期
关键词：
Ga2O3; hydrogen; InGaN; photocatalysis; substrates; AQUEOUS WATER; HYDROGEN GAS; DECOMPOSITION; GENERATION; OXIDATION; GROWTH; VAPOR; H-2;
D O I：
10.1002/pssa.201431731
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H-2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts.
引用
收藏
页码：1029 / 1032
页数：4
相关论文
共 50 条
  • [31] Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates
    Yang, Zhenni
    Xu, Xiangyu
    Wang, Yan
    Kuang, Siliang
    Chen, Duanyang
    Qi, Hongji
    Zhang, K. H. L.
    [J]. APPLIED PHYSICS LETTERS, 2023, 122 (17)
  • [32] A comparative study of Ir/Ga2O3, Pt/Ga2O3, and Ru/Ga2O3 catalysts in selective hydrogenation of crotonaldehyde
    Gebauer-Henke, E.
    Farbotko, J.
    Touroude, R.
    Rynkowski, J.
    [J]. KINETICS AND CATALYSIS, 2008, 49 (04) : 574 - 580
  • [33] A comparative study of Ir/Ga2O3, Pt/Ga2O3, and Ru/Ga2O3 catalysts in selective hydrogenation of crotonaldehyde
    E. Gebauer-Henke
    J. Farbotko
    R. Touroude
    J. Rynkowski
    [J]. Kinetics and Catalysis, 2008, 49 : 574 - 580
  • [34] Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates
    Saha, Sudipto
    Meng, Lingyu
    Feng, Zixuan
    Anhar Uddin Bhuiyan, A. F. M.
    Zhao, Hongping
    Singisetti, Uttam
    [J]. APPLIED PHYSICS LETTERS, 2022, 120 (12)
  • [35] Growth and characterization of β-Ga2O3 thin films on different substrates
    Hao, S. J.
    Hetzl, M.
    Schuster, F.
    Danielewicz, K.
    Bergmaier, A.
    Dollinger, G.
    Sai, Q. L.
    Xia, C. T.
    Hoffmann, T.
    Wiesinger, M.
    Matich, S.
    Aigner, W.
    Stutzmann, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 125 (10)
  • [36] Synthesis and characterization of β-Ga2O3 nanostructures grown on GaAs substrates
    Jangir, R.
    Ganguli, Tapas
    Tiwari, Pragya
    Porwal, S.
    Srivastava, Himanshu
    Rai, S. K.
    Khattak, B. Q.
    Oak, S. M.
    [J]. APPLIED SURFACE SCIENCE, 2011, 257 (22) : 9323 - 9328
  • [37] Depletion-Mode Ga2O3 MOSFETs on β-Ga2O3 (010) Substrates with Si-Ion-Implanted Channel and Contacts
    Higashiwaki, Masataka
    Sasaki, Kohei
    Wong, Man Hoi
    Kamimura, Takafumi
    Krishnamurthy, Daivasigamani
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    [J]. 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
  • [38] Effect of Oxygen on the Electrical Conductivity of Pt-Contacted α-Ga2O3/ε(κ)-Ga2O3 MSM Structures on Patterned Sapphire Substrates
    Yakovlev, Nikita N.
    Nikolaev, Vladimir I.
    Stepanov, Sergey I.
    Almaev, Aleksei V.
    Pechnikov, Aleksei I.
    Chernikov, Evgeny V.
    Kushnarev, Bogdan O.
    [J]. IEEE SENSORS JOURNAL, 2021, 21 (13) : 14636 - 14644
  • [39] Growth of β-Ga2O3 nanobelts on Ir-coated substrates
    Kim, HW
    Kim, NH
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (03): : 537 - 540
  • [40] Characterization of AlGaN and Ga2O3 Epitaxies on Silicon and Sapphire Substrates
    Perez, Roman Garcia
    Castillo, Jorge
    Huq, Hasina
    [J]. SOCIETY OF VACUUM COATERS 59TH ANNUAL TECHNICAL CONFERENCE PROCEEDINGS, 2016, 2016, : 479 - 485
12345