Low-Voltage Bulk-Driven QFG-Regulated Self-Cascode Super MOS Transistor

被引：0
|
作者：
Thongleam, Thawatchai [1 ]
Suadet, Apirak [1 ]
Kasemsuwan, Varakorn [1 ]
机构：
[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Sch Elect Engn, Bangkok 10520, Thailand
来源：
2016 13TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING/ELECTRONICS, COMPUTER, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGY (ECTI-CON) | 2016年
关键词：
low voltage; bulk-driven; regulated self-cascode; INPUT STAGE; OTA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (Gm((eff))), high effective drain impedance (RD(eff)) and low effective source impedance (RS(eff)). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 mu m CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 mu W. The simulation results showed higher Gm((eff)), larger RD(eff) and smaller RS(eff) as compared to those of simple bulk-driven MOS transistor.
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页数：4
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