Low-Voltage Bulk-Driven QFG-Regulated Self-Cascode Super MOS Transistor

被引：0

作者：

Thongleam, Thawatchai ^{[1
]}

Suadet, Apirak ^{[1
]}

Kasemsuwan, Varakorn ^{[1
]}

机构：

[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Sch Elect Engn, Bangkok 10520, Thailand

来源：

2016 13TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING/ELECTRONICS, COMPUTER, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGY (ECTI-CON) | 2016年

关键词：

low voltage; bulk-driven; regulated self-cascode; INPUT STAGE; OTA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (Gm((eff))), high effective drain impedance (RD(eff)) and low effective source impedance (RS(eff)). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 mu m CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 mu W. The simulation results showed higher Gm((eff)), larger RD(eff) and smaller RS(eff) as compared to those of simple bulk-driven MOS transistor.

引用

页数：4

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