Influence of Zr/Ti ratio on electrical properties of PZT thick films deposited by aerosol deposition process

被引：3
|
作者：
Hahn, B. D. [1 ]
Park, D. S. [1 ]
Choi, J. J. [1 ]
Ryu, J. H. [1 ]
Yoon, W. H. [1 ]
Kim, D. Y. [2 ]
机构：
[1] Korea Inst Mach & Mat, Dept Future Technol, 66 Sangnam Dong, Chang Won 641010, Gyeong Nam, South Korea
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
来源：
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/ISAF.2007.4393297
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lead zirconate titanate (PZT) thick films with thickness of 10 mu m were deposited on silicon and sapphire substrates by aerosol deposition process at room temperature. The films with Zr/Ti ratio of 45155, 52/48 and 60/40 were fabricated in order to investigate the effect of compositional modifications on the electrical properties of PZT thick films. Microscopic examination of the films revealed dense microstructures with no crack. After deposition, the films were annealed at 600, 700 and 900 C for 1h in an electric furnace. The annealed films showed markedly improved electrical properties in comparison with the as-deposited films. Relative dielectric constant was the highest for the PZT (52/48) film. As the Zr/Ti ratio was increased, the remanent polarization and the coercive field were decreased. PZT (52/48) film annealed at 900 C for I h exhibited the best overall combination of electrical properties.
引用
收藏
页码：457 / +
页数：2
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