Fabrication of Nanometer-Scale Carbon Nanotube Field-Effect Transistors on Flexible and Transparent Substrate

被引：5
|
作者：
Kim, Tae-Geun [1 ,2 ]
Hwang, Jongseung [1 ,2 ]
Kang, Jeongmin [2 ]
Kim, Sangsig [2 ]
Hwang, SungWoo [1 ,2 ]
机构：
[1] Korea Univ, Res Ctr Time Domain Nanofunct Devices, Seoul 136701, South Korea
[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 02期
关键词：
Nanometer-Scale; Carbon Nanotube; Field-Effect Transistor; Flexible; Transport Characteristics; Electron-Beam Lithography; THIN-FILM TRANSISTORS; CIRCUITS;
D O I：
10.1166/jnn.2011.3386
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured current-voltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 10(2). The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.
引用
收藏
页码：1393 / 1396
页数：4
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