Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

被引：9

作者：

Udhiarto, Arief ^{[1
]}

Moraru, Daniel ^{[1
]}

Mizuno, Takeshi ^{[1
]}

Tabe, Michiharu ^{[1
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期

关键词：

SINGLE; TRANSPORT; MOSFETS; DEVICES;

D O I：

10.1063/1.3637445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study interaction of single-electron current and incident photons in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors. Trapping events of a photoexcited-electron by a trap donor are observed as random telegraph signals in single-electron-tunneling current flowing through a current-path donor. Trapping causes a potential change at the current-path donor, inducing a current change. An opposite current change is caused by electron detrapping from the trap donor to the current-path donor. This indicates that only a few donors (two donors in this study) work in the interaction between single-electron transport and photoexcited-electron trapping, even in the presence of many donors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3637445]

引用

页数：3

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