Cd1-xZnxTe alloy films grown by r.f.sputtering

被引:0
|
作者
Zeng Dong-mei [1 ]
Zhou Hai [1 ]
Sun Jin-chi
Yang Ying-ge [1 ,2 ]
Feng Wen-ran [1 ,2 ]
Wan Han-cheng [1 ,2 ]
Lu Yi-min [1 ,2 ]
机构
[1] Beijing Inst Petrochem Technol, Dept Mat Sci & Engn, Beijing 102617, Peoples R China
[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
关键词
Cd1-xZnxTe film; RF sputtering; deposition temperature;
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Cd1-xZnxTe alloy films with 1.6 and 1.7 eV band gaps were deposited on glass as the absorbed layer in solar cells by RF magnetron sputtering from Cd0.9Zn0.1Te crystals target grown by the Modified Vertical Bridgman method. High-quality polycrystalline films were obtained. The influences of the deposition temperature on polycrystalline Cd1-xZnxTe films have been studied using X-ray diffraction (XRD), energy dispersive X-ray (EDX), step profilometer, atomic force microscopy (AFM) and ultraviolet spectrophotometer. We found that the degree of crystallinity and the grain size of the deposited films changed regularly with the increase of deposition temperatures The optical absorption coefficient alpha decreased monotonically with the increase of deposition temperature.
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页码:253 / +
页数:2
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