The Properties of Cd1-xZnxTe Films Prepared by RF Magnetron Sputtering

Cd1-xZnxTe films were prepared on borosilicate glass substrate using RF magnetron sputtering in this work. The effects of sputtering power, sputtering pressure and substrate temperature on the properties of the films were investigated in detail. The films were annealed in CdCl(2)atmosphere for 2 h at 200 degrees C, 300 degrees C, and 400 degrees C, respectively. The effects of annealing treatment on the properties of the films were also investigated. The properties of the films were investigated by x-ray diffraction, atomic force microscopy, and current-voltage (I-V) characterization. The results indicate that crystalline quality and the average grain size of the films increases with the increases of sputtering power. The grain size of the films becomes larger as the substrate temperature increases. The Zn concentration of the films rises as the sputtering pressure increases. After annealing, the grain size of the films becomes larger, furthermore, the resistivity decreases.