EXCITONIC LINE BROADENING IN BULK GROWN CD1-XZNXTE

被引：29

作者：

OETTINGER, K ^{[1
]}

HOFMANN, DM ^{[1
]}

EFROS, AL ^{[1
]}

MEYER, BK ^{[1
]}

SALK, M ^{[1
]}

BENZ, KW ^{[1
]}

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,W-7800 FREIBURG,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cd1-xZnxTe crystals grown by the traveling heater method have been investigated by low-temperature photoluminescence. The excitonic energy gap as a function of the alloy composition was determined over the complete range of x = 0 to x = 1. The composition dependent broadening of the neutral acceptor bound exciton (A 0X) line was determined. Theoretical calculations, where the A 0X exciton is treated within the pseudodonor model and the conduction/valence band offset between CdTe and ZnTe is taken into account, give close agreement with the experiment for x less-than-or-equal-to 0.77. Evidence for clustering of Zn atoms is found for x greater-than-or-equal-to 0.77.

引用

页码：4523 / 4526

页数：4

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