Design and Simulation of GaN/InGaN Core/Shell/Shell Radial Nanowires for Solar Energy Harvesting

被引：0

作者：

Routray, S. R. ^{[1
]}

Lenka, T. R. ^{[1
]}

机构：

[1] Natl Inst Technol Silchar, Microelect & VLSI Design Grp, Dept Elect & Commun Engn, Silchar 788010, Assam, India

来源：

2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2017年

关键词：

InGaN; Nanowire; Orientation; Polarization Charge; Photovoltaic cell; NITRIDE; POLARIZATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper effect of crystallographic orientation-based polarization charges on physical properties of GaN/InGaN Nanowires for Photovoltaic applications are investigated. Due to lattice mismatch between InN and GaN, Indium (In) rich InGaN films commonly demonstrate a polarization effect, which affects the carrier dynamics of devices for photovoltaic applications. In this numerical study, we report the effect of polarization charges on photo-generated carrier separation in core-shell-shell GaN/InGaN radial nanowires with {0001} and {000-1} crystallographic orientation. Moreover, a novel polarization effect is also proposed with triangular nanowire structure for efficient next generation photovoltaic applications.

引用

页码：17 / 18

页数：2

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