A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDs

被引：5
|
作者：
Maur, Matthias Auf Der [1 ]
Sacconi, Fabio [1 ]
Di Carlo, Aldo [1 ]
机构：
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 01期
关键词：
Core shell; light-emitting diode (LED); nanorod; nitrides; simulation; WIRES;
D O I：
10.1109/TED.2012.2226037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present simulation results on the optical and transport properties of InGaN/GaN core-shell nanorod light-emitting diodes. The influence of contact position, surface recombination, and doping configuration on internal quantum efficiency is examined. The qualitative behavior when adding an electron blocking layer and the dependence on In content have been studied.
引用
收藏
页码：171 / 177
页数：7
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