Quantum well engineering in InGaN/GaN core-shell nanorod structures

被引：7

作者：

Bryce, C. G. ^{[1
]}

Le Boulbar, E. D. ^{[2
]}

Coulon, P-M ^{[2
]}

Edwards, P. R. ^{[1
]}

Girgel, I. ^{[2
]}

Allsopp, D. W. E. ^{[2
]}

Shields, P. A. ^{[2
]}

Martin, R. W. ^{[1
]}

机构：

[1] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland

[2] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 42期

基金：

英国工程与自然科学研究理事会;

关键词：

nanostructure; InGaN; cathodoluminescence; LED; GaN; nanorod;

D O I：

10.1088/1361-6463/aa8ae4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

引用

页数：7

共 50 条

[1] A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDs
Maur, Matthias Auf Der
Sacconi, Fabio
Di Carlo, Aldo
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 171 - 177
[2] Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays
Liao, Che-Hao
Chang, Wen-Ming
Yao, Yu-Feng
Chen, Hao-Tsung
Su, Chia-Ying
Chen, Chih-Yen
Hsieh, Chieh
Chen, Horng-Shyang
Tu, Charng-Gan
Kiang, Yean-Woei
Yang, C. C.
Hsu, Ta-Cheng
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (05)
[3] Multi-section core-shell InGaN/GaN quantum-well nanorod light-emitting diode array
Tu, Charng-Gan
Yao, Yu-Feng
Liao, Che-Hao
Su, Chia-Ying
Hsieh, Chieh
Weng, Chi-Ming
Lin, Chun-Han
Chen, Hao-Tsung
Kiang, Yean-Woei
Yang, C. C.
[J]. OPTICS EXPRESS, 2015, 23 (17): : 21919 - 21930
[4] Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers
Li, Changyi
Wright, Jeremy B.
Liu, Sheng
Lu, Ping
Figiel, Jeffrey J.
Leung, Benjamin
Luk, Ting Shan
Brener, Igal
Feezell, Daniel
Brueck, S. R. J.
Wang, George T.
[J]. 2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2015,
[5] Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties
M. Auf der Maur
F. Sacconi
A. Di Carlo
[J]. Optical and Quantum Electronics, 2013, 45 : 617 - 622
[6] Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties
Maur, M. Auf Der
Sacconi, F.
Di Carlo, A.
[J]. OPTICAL AND QUANTUM ELECTRONICS, 2013, 45 (07) : 617 - 622
[7] Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties
der Maur, M. Auf
Sacconi, F.
Di Carlo, A.
[J]. 2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2012, : 95 - 96
[8] Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles
Jang, Lee-Woon
Sahoo, Trilochan
Jeon, Dae-Woo
Kim, Myoung
Jeon, Ju-Won
Jo, Dong-Seob
Kim, Min-Kyu
Yu, Yeon-Tae
Polyakov, Alexander Y.
Lee, In-Hwan
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (25)
[9] Purely Sidewall InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes
Lin, Da-Wei
Wu, Yung-Chi
Kuo, Hao-Chung
Chi, Gou-Chung
Hsu, Lung-Hsing
Lan, Yu-Pin
Chen, Yang-Fang
[J]. 2015 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN), 2015,
[10] On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes
Kou, Jianquan
Chen, Sung-Wen Huang
Che, Jiamang
Shao, Hua
Chu, Chunshuang
Tian, Kangkai
Zhang, Yonghui
Bi, Wengang
Zhang, Zi-Hui
Kuo, Hao-Chung
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 176 - 182

← 1 2 3 4 5 →