Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles

被引：15
|
作者：
Jang, Lee-Woon
Sahoo, Trilochan
Jeon, Dae-Woo
Kim, Myoung
Jeon, Ju-Won
Jo, Dong-Seob
Kim, Min-Kyu
Yu, Yeon-Tae
Polyakov, Alexander Y.
Lee, In-Hwan [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Adv Mat Engn, Jeonju 561756, South Korea
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.3671394
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) efficiency increase up to 2.8 times was observed for GaN/InGaN multi-quantum-well (MQW) structures as a result of deposition of a thin layer of about 40-nm-diameter Ag nanoparticles (NPs) surrounded by SiO2 shell. These Ag/SiO2 NPs were prepared by sol-gel method. The amount of PL intensity enhancement decreased with increasing the SiO2 shell thickness. PL intensity increase was accompanied by corresponding decrease of PL decay time and is ascribed to a strong coupling of MQW region to localized surface plasmons (LSPs) associated with Ag/SiO2 NPs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671394]
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页数：3
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