Theoretical investigation of the phonon-polariton mode in Czochralski-grown piezoelectric superlattice

被引：4

作者：

Bai, Wen-Chao ^{[1
]}

Lan, Zhong-Jian ^{[1
]}

Zhang, Han-Zhuang ^{[2
]}

Zhang, Han ^{[2
]}

Jiang, Li ^{[3
]}

机构：

[1] Shaoyang Univ, Dept Phys, Shaoyang 422001, Peoples R China

[2] Jilin Univ, Dept Phys, Changchun 130000, Peoples R China

[3] Changchun Univ Sci & Technol, Changchun 130000, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 97卷

基金：

中国国家自然科学基金;

关键词：

Ferroelectric crystal; Piezoelectric periodic structure; Phonon-polariton; MGO-DOPED LINBO3; 2ND-HARMONIC GENERATION; CRYSTALS; LITAO3; LIGHT;

D O I：

10.1016/j.spmi.2016.06.026

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The properties of phonon-polaritons in Czochralski-grown piezoelectric superlattice (CPSL), are studied theoretically. We propose the phonon-polariton mode of CPSL. The mechanism for polariton coupling is analyzed. We discuss the factors that influence the properties of the phonon-polariton. Some potential applications are also discussed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：167 / 175

页数：9

共 33 条

[21] Determination of thickness of thin thermal oxide layers on Czochralski-grown silicon wafers from their longitudinal optical vibrational mode
Shirai, H
Takeda, R
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (07): : 3876 - 3877
[22] Determination of thickness of thin thermal oxide layers on Czochralski-grown silicon wafers from their longitudinal optical vibrational mode
Shirai, H.
Takeda, R.
[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (07): : 3876 - 3877
[23] Crystal defects in epitaxial layer on nitrogen-doped Czochralski-grown silicon substrate (I) - Investigation of the crystallographic structure
Nakai, K
Kitahara, K
Ohta, Y
Ikari, A
Tanaka, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (4A): : 1241 - 1246
[24] Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si:: local vibrational mode studies
Murin, LI
Lindström, JL
Markevich, VP
Misiuk, A
Londos, CA
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (22) : S2237 - S2246
[25] Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation
Qian Wang
Bincheng Li
[J]. International Journal of Thermophysics, 2016, 37
[26] Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation
Wang, Qian
Li, Bincheng
[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2016, 37 (04) : 1 - 10
[27] X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystals
N. N. Novikov
P. A. Tesel’ko
O. V. Mikhalyuk
[J]. Physics of the Solid State, 2007, 49 : 215 - 219
[28] X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystals
Novikov, N. N.
Tesel'ko, P. A.
Mikhalyuk, O. V.
[J]. PHYSICS OF THE SOLID STATE, 2007, 49 (02) : 215 - 219
[29] FLOW MODE TRANSITION AND ITS EFFECTS ON CRYSTAL-MELT INTERFACE SHAPE AND OXYGEN DISTRIBUTION FOR CZOCHRALSKI-GROWN SI SINGLE-CRYSTALS
WATANABE, M
EGUCHI, M
KAKIMOTO, K
ONO, H
KIMURA, S
HIBIYA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) : 285 - 290
[30] X-RAY TOPOGRAPHIC INVESTIGATION OF DISLOCATIONS IN CZOCHRALSKI-GROWN ALEXANDRITE (BEAL2O4CR) SINGLE-CRYSTAL
ZHANG, Q
HU, B
DENG, PZ
GAN, FX
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (4A) : A92 - A97

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