Determination of thickness of thin thermal oxide layers on Czochralski-grown silicon wafers from their longitudinal optical vibrational mode

被引：2
|
作者：
Shirai, H
Takeda, R
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 07期
关键词：
Czochralski-grown silicon wafer; thermal oxide thickness; Berreman effect; infrared spectrum; p-polarized 73.7 degrees incidence;
D O I：
10.1143/JJAP.35.3876
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Infrared transmission spectra of the longitudinal optical (LO) mode (1250 cm(-1)) of thin thermal oxide layers (10-100 Angstrom formed at 800-950 degrees C in O-2 or O-2 diluted with N-2) on silicon wafers were measured at p-polarized 73.7 degrees incidence, based on the Berreman effect. An excellent Linear correlation was found between the LO absorbance and the oxide thickness, which exhibits no dependence upon the oxygen content in silicon.
引用
收藏
页码：3876 / 3877
页数：2
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  • [1] Determination of thickness of thin thermal oxide layers on Czochralski-grown silicon wafers from their longitudinal optical vibrational mode
    Shirai, H.
    Takeda, R.
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (07): : 3876 - 3877
  • [2] Thermal warpage of large diameter Czochralski-grown silicon wafers
    Shimizu, Hirofumi
    Aoshima, Takaaki
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2315 - 2323
  • [3] THERMAL WARPAGE OF LARGE DIAMETER CZOCHRALSKI-GROWN SILICON-WAFERS
    SHIMIZU, H
    AOSHIMA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (12): : 2315 - 2323
  • [4] DENUDED ZONE AND MICRODEFECT FORMATION IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THERMAL ANNEALING
    KUGIMIYA, K
    AKIYAMA, S
    NAKAMURA, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C94 - C94
  • [5] DETERMINATION OF THE DENUDED ZONE IN CZOCHRALSKI-GROWN SILICON WAFERS THROUGH MOS LIFETIME PROFILING.
    Paz, Oded
    Schneider, Christian P.
    [J]. IEEE Transactions on Electron Devices, 1985, ED-32 (12 pt II) : 2830 - 2838
  • [6] DETERMINATION OF THE DENUDED ZONE IN CZOCHRALSKI-GROWN SILICON-WAFERS THROUGH MOS LIFETIME PROFILING
    PAZ, O
    SCHNEIDER, CP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2830 - 2838
  • [7] Roughness of thermal oxide layers grown on ion implanted silicon wafers
    Iacona, F
    Raineri, V
    La Via, F
    Rimini, E
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 619 - 627
  • [8] Roughness of thermal oxide layers grown on ion implanted silicon wafers
    [J]. J Vac Sci Technol B, 2 (619):
  • [9] Diffuse x-ray scattering from thermal donors in Czochralski-grown silicon
    Yamazaki, T
    Hashimoto, I
    [J]. PHYSICAL REVIEW B, 1997, 56 (09): : 5228 - 5234
  • [10] Ring-Like Defect Formation in N-Type Czochralski-Grown Silicon Wafers during Thermal Donor Formation
    Basnet, Rabin
    Sio, Hang
    Siriwardhana, Manjula
    Rougieux, Fiacre E.
    Macdonald, Daniel
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (04):
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