Effects of silica slurry temperature on chemical mechanical polishing for tetraethyl orthosilicate film

被引：7
|
作者：
Kim, NH
Seo, YJ
Lee, WS
机构：
[1] Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea
[2] Daebul Univ, Dept Elect Engn, Choongnam 526702, South Korea
[3] Chosun Univ, Dept Elect Engn, Kwangju 501759, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 37-41期
关键词：
chemical mechanical polishing (CMP); silica slurry; slurry temperature; tetraethyl orthosilicate (TEOS); X-ray photoelectron spectroscopy (XPS);
D O I：
10.1143/JJAP.44.L1256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of silica slurry temperature on the chemical mechanical polishing (CMP) performance of tetraethyl orthosilicate (TEOS) film were investigated. Slurry showed the following dependences of temperature: pH decreased slightly; conductivity showed an increase of 1.88% per degree; the dispersion ability of abrasive particles was improved; the particle size of silica slurry decreased; removal rate significantly increased from 10-40 degrees C and was maintained constant beyond 40 degrees C. An increasing amount of hydroxyl (OH-) groups diffused into the TEOS, and weakened reactants, such as H-C-O-Si bonds on the surface of TEOS film, were actively generated with increasing slurry temperature, which could be removed easily.
引用
收藏
页码：L1256 / L1258
页数：3
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