Formation and coarsening of near-surface Ga nanoparticles on SiNx

被引：1

作者：

Canniff, J. C. ^{[1
]}

Jeon, S. ^{[1
]}

Huang, S. ^{[1
]}

Goldman, R. S. ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 24期

基金：

美国国家科学基金会;

关键词：

CATALYZED SILICON NANOWIRES; GALLIUM; GROWTH; ORIENTATION; BEAM;

D O I：

10.1063/1.4922454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiNx using Ga+ focused-ion-beam-irradiation of SiNx, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as similar to 4 x 10(12) cm(-2). The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes. (C) 2015 AIP Publishing LLC.

引用

页数：5

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