High-performance copper alloy films for barrierless metallization

被引：24
|
作者：
Lin, C. H. [1 ]
Leau, W. K. [2 ]
Wu, C. H. [3 ]
机构：
[1] Chin Min Inst Technol, Dept Environm Engn, Miaoli 351, Tou Fen, Taiwan
[2] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 202, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Grad Inst Engn, Taipei 10607, Taiwan
来源：
APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 02期
关键词：
Copper alloy films; Barrierless metallization; Insoluble substances; DIFFUSION BARRIER; THERMAL-STABILITY; CU METALLIZATION; CU(W);
D O I：
10.1016/j.apsusc.2010.07.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, we observe useful properties of V(1.1)- and V(0.8)N(0.4)-bearing copper (Cu) films deposited on barrierless silicon (Si) substrates by a cosputtering process. The Cu(98.8)(V(0.8)N(0.4)), or Cu(VN(x)) for brevity, films exhibit low resistivity (2.9 mu Omega cm) and minimal leakage current after annealing at temperatures up to 700 degrees C for 1 h; no detectable reaction occurs at the Cu/Si interface. These observations confirm the high thermal stability of Cu(VN(x)) films. Furthermore, since these films have good adhesion features, they can be used for barrierless Cu metallization. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：553 / 557
页数：5
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