Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

被引：1
|
作者：
Ha, S. -K. [1 ]
Bounouar, S. [2 ]
Song, J. D. [1 ]
Lim, J. Y. [1 ]
Donatini, F. [2 ]
Dang, L. S. [2 ]
Poizat, J. P. [2 ]
Kim, J. S. [3 ]
Choi, W. J. [1 ]
Han, I. K. [1 ]
Lee, J. I. [1 ]
机构：
[1] KIST, Nano Convergence Devices Ctr, Seoul 136791, South Korea
[2] UJF, Team Nanophys & Semicond, Inst Neel, CEA,CNRS, F-38042 Grenoble, France
[3] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
quantum dot; droplet epitaxy; micro-photoluminescence; single photon source; EMISSION;
D O I：
10.1063/1.3666500
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.
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页数：2
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